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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A DESCRIPTION With TO-220Fa package Complement to type 2SB1192/1192A Large collector power dissipation APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ABSOLUTE MAXIMUM RATINGS AT Ta=25ae SYMBOL VCBO PARAMETER VCEO TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 200 Collector-base voltage Open emitter 2SD1772 150 Collector-emitter voltage Open base 2SD1772A 180 6 1 2 TC=25ae 25 Emitter-base voltage Collector current (DC) Collector current-peak Open collector UNIT V V VEBO IC ICM V A A PC Collector power dissipation Ta=25ae 2 150 -55~150 ae ae w Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SD1772 V(BR)CEO Collector-emitter breakdown voltage 2SD1772A V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IE=0.5mA , IC=0 IC=500mA ;IB=50mA IC=300mA ; VCE=10V VCB=200V; IE=0 VEB=4V; IC=0 IC=100mA ; VCE=10V IC=5mA , IB=0 CONDITIONS 2SD1772 2SD1772A SYMBOL MIN 150 TYP. MAX UNIT V 180 6 1.0 1.0 50 50 60 240 |I |I V V V A A hFE-1 Classifications Q 60-140 P 100-240 TOR NDU ICO E SEM ANG INCH IC=300mA ; VCE=10V 50 Output capacitance IE=0 ; VCB=10V;f=1MHz 27 Transition frequency IC=100mA ; VCE=10V;f=1MHz 20 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1772 2SD1772A TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A TOR NDU ICO E SEM ANG INCH 4 |
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